most citedOxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors

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cond-mat.mes-hall2019★ 1 cited

Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors

Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9

In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…