most citedEffect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

1 citations · 1 across the 1 of their papers we have counts for

collaborators

1 paper

physics.app-ph2019★ 1 cited

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Yongle Qi, Suzhen Wu

Characteristic electrical curves of GaN HEMT devices from Infineon and Transphorm are compared at different X-ray radiation dose. It is shown that the device with pGaN gate is more…