2 citations · 3 across the 2 of their papers we have counts for
2 papers
physics.app-ph2019★ 1 cited
Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate
Yongle Qi, Suzhen Wu
Characteristic electrical curves of GaN HEMT devices from Infineon and Transphorm are compared at different X-ray radiation dose. It is shown that the device with pGaN gate is more…
physics.app-ph2019★ 2 cited
Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts
Xinpeng Lin, Yumeng Zhu, Yongle Qi +10
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…