23 citations · 60 across the 5 of their papers we have counts for
6 papers
Spin polarized electron beams production beyond III-V semiconductors
Luca Cultrera
This paper summarizes the state of the art of photocathode based on III-V semiconductors for spin polarized electron beam production. The limitations preventing this class of mater…
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
Jai Kwan Bae, Matthew Andorf, Adam Bartnik +4
Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularit…
A kiloelectron-volt ultrafast electron micro-diffraction apparatus using low emittance semiconductor photocathodes
W. H. Li, C. J. R. Duncan, M. B. Andorf +10
We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long…
Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications
L. Cultrera, E. Rocco, F. Shahedipour-Sandvik +6
We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator…
Monte Carlo Modeling of Spin-polarized Photoemission from p-doped GaAs Activated to Negative Electron Affinity
Oksana Chubenko, Siddharth Karkare, Dimitre Dimitrov +4
The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a p-doped GaAs activated to negative electron affinity (NEA) is studied in detail usin…
Improved lifetime of a high spin polarization superlattice photocathode
Jai Kwan Bae, Alice Galdi, Luca Cultrera +3
Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity…