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cond-mat.mtrl-sci2024
Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography
Xiaoyue Gao1, Zhuohui Liu, Bo Han +8
Hf0.5Zr0.5O2 (HZO) is a promising candidate for next generation ferroelectric memories and transistors. However, its ferroelectricity origin is still under debate due to the comple…
cond-mat.mtrl-sci2024
Single-atom-resolved vibrational spectroscopy of a dislocation
Hailing Jiang, Tao Wang, Zhenyu Zhang +10
Phonon resistance from dislocation scattering is often divided into short-range core interactions and long-range strain field interactions. Using electron energy-loss spectroscopy…