activity
20192023
most citedAtomic-scale imaging of CH3NH3PbI3 structure and its decomposition pathway

98 citations · 236 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2023

Controlling the 2D magnetism of CrBr by van der Waals stacking engineering

Shiqi Yang, Xiaolong Xu, Bo Han +9

The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals…

cond-mat.mtrl-sci2022★ 67 cited

A gate-programmable van der Waals metal-ferroelectric-semiconductor memory

Wanying Li, Yimeng Guo, Zhaoping Luo +10

Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet…

cond-mat.mtrl-sci2022

Direct observation of local antiferroelectricity induced phonon softening at a SrTiO3 defect

Bo Han, Ruochen Shi, Huining Peng +7

Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of…

cond-mat.mtrl-sci2021★ 60 cited

Engineering of Atomic-Scale Flexoelectricity at Grain Boundaries

Mei Wu, Xiaowei Zhang, Xiaomei Li +9

Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not re…

physics.app-ph2021★ 98 cited

Atomic-scale imaging of CH3NH3PbI3 structure and its decomposition pathway

Shulin Chen, Changwei Wu, Bo Han +13

Understanding the atomic structure and structural instability of organic-inorganic hybrid perovskites is the key to appreciate their remarkable photoelectric properties and failure…

cond-mat.mtrl-sci2019★ 11 cited

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures

Bo Han, Chen Yang, Xiaolong Xu +8

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels.…