activity
20122026
most citedAtomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

298 citations · 411 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Imaging of van der Waals Materials via Standing-Wave Photoemission Microscopy: Depth-Resolved Electronic Structure of WS2

J. R. Paudel, R. Muzzio, M. E. Matzelle +13

Two-dimensional van der Waals materials promise electronic, optoelectronic, and quantum technologies, yet depth-resolved characterization remains challenging. Here, we demonstrate…

cond-mat.mtrl-sci2025★ 4 cited

High Temperature Quantum Emission from Covalently Functionalized van der Waals Heterostructures

S. Carin Gavin, Hsun-Jen Chuang, Anushka Dasgupta +10

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive nanomaterials for quantum information applications due to single photon emission (SPE) from atomic defec…

cond-mat.mtrl-sci2024★ 1 cited

Ferroelectric modulation of quantum emitters in monolayer WS

Sung-Joon Lee, Hsun-Jen Chuang, Andrew Yeats +3

Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this e…

cond-mat.mtrl-sci2019★ 298 cited

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Matthew R. Rosenberger, Hsun-Jen Chuang, Madeleine Phillips +5

Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van de…

cond-mat.mtrl-sci2015★ 67 cited

Anomalous temperature-dependent spin-valley polarization in monolayer WS

Aubrey T. Hanbicki, George Kioseoglou, Marc Currie +4

Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use o…

cond-mat.mtrl-sci2012★ 41 cited

Electrical injection and detection of spin accumulation in Ge at room temperature

A. T. Hanbicki, S. -. F. Cheng, R. Goswami +2

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the re…