activity
20162025
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 535 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2025

Single femtosecond laser pulse-driven ferromagnetic switching

Chen Xiao, Boyu Zhang, Xiangyu Zheng +18

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission an…

cond-mat.mtrl-sci2025★ 3 cited

Giant Orbital Torque-driven Picosecond Switching in Magnetic Tunnel Junctions

Yuxuan Yao, Chen Xiao, Xiaobai Ning +18

Orbital Hall effect was recently discovered as a novel pathway for driving magnetic moment. However, the integration of orbital Hall effect in magnetic memories suffers from low or…

cond-mat.mes-hall2024★ 3 cited

Anatomy of Thermally Interplayed Spin-Orbit Torque Driven Antiferromagnetic Switching

Wenlong Cai, Zanhong Chen, Yuzhang Shi +8

Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here…

physics.app-ph2024

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

Min Wang, Zhengyi Hou, Chenyi Wang +13

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 leve…

physics.app-ph2020★ 1 cited

Observation of Magnetic Droplets in Magnetic Tunnel Junctions

Kewen Shi, Wenlong Cai, Sheng Jiang +10

Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase t…

cond-mat.mes-hall2020★ 61 cited

Picosecond Switching of Optomagnetic Tunnel Junctions

Luding Wang, Houyi Cheng, Pingzhi Li +7

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolut…

physics.app-ph2019

Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture

Xueying Zhang, Wenlong Cai, Mengxing Wang +6

Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing.…

physics.app-ph2018★ 4 cited

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques

Mengxing Wang, Wenlong Cai, Daoqian Zhu +11

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. I…

cond-mat.mes-hall2018★ 95 cited

Skyrmions in magnetic tunnel junctions

Xueying Zhang, Wenlong Cai, Xichao Zhang +10

In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMI) by a spin-polarized…

cond-mat.mes-hall2018★ 1 cited

Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction

Jiaqi Zhou, Weisheng Zhao, Kaihua Cao +3

Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel jun…

physics.app-ph2017★ 317 cited

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Mengxing Wang, Wenlong Cai, Kaihua Cao +11

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…

physics.app-ph2017★ 15 cited

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…

cond-mat.mes-hall2016★ 35 cited

Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures

Boyu Zhang, Anni Cao, Junfeng Qiao +11

Pt/Co/heavy metal (HM) tri-layered structures with interfacial perpendicular magnetic anisotropy (PMA) are currently under intensive research for several emerging spintronic effect…