most citedElucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the () Si-face and () C-face by using a new Si-O-C interatomic potential

29 citations · 57 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2019★ 6 cited

Optimization of heterogeneous ternary Li3PO4-Li3BO3-Li2SO4 mixture for Li-ion conductivity by machine learning

Kenji Homma, Yu Liu, Masato Sumita +5

Mixing heterogeneous Li-ion conductive materials is one of potential ways to enhance the Li-ion conductivity more than that of the parent materials. However, the development of the…

cond-mat.mtrl-sci2018★ 29 cited

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the () Si-face and () C-face by using a new Si-O-C interatomic potential

So Takamoto, Takahiro Yamasaki, Takahisa Ohno +3

Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO interface has been…

cond-mat.mtrl-sci2018★ 22 cited

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

So Takamoto, Takahiro Yamasaki, Jun Nara +4

Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper de…