activity
20182020
collaborators

6 papers

cond-mat.supr-con2020

Two superconducting components with different symmetries in Nd1-xSrxNiO2 films

Qiangqiang Gu, Yueying Li, Siyuan Wan +8

The pairing mechanism in cuprates remains as one of the most challenging issues in the field of condensed matter physics. The unique 3d9 electron orbital of the Cu2+ ionic states i…

cond-mat.supr-con2019

Twofold symmetry of proximity-induced superconductivity in BiTe/BiSrCaCuO heterostructures revealed by scanning tunneling microscopy

Siyuan Wan, Qiangqiang Gu, Huazhou Li +5

We observe proximity-induced superconductivity in the \textit{in situ} prepared heterostructures constructed by topological insulator BiTe thin films and high-temperatu…

cond-mat.mtrl-sci2018

Non-volatile ferroelectric memory effect in ultrathin α-In2Se3

Siyuan Wan, Yue Li, Wei Li +8

Recent experiments on layered α-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders α-In2Se3 an excellent platform for dev…

cond-mat.supr-con2018

Directly visualizing the sign change of d-wave superconducting gap in Bi2Sr2CaCu2O8+δ by phase-referenced quasiparticle interference

Qiangqiang Gu, Siyuan Wan, Qingkun Tang +7

The superconducting state is achieved by the condensation of Cooper pairs and is protected by the superconducting gap. The pairing interaction between the two electrons of a Cooper…

cond-mat.supr-con2018

Sign reversal superconducting gaps revealed by phase referenced quasi-particle interference of impurity induced bound states in (LiFe)OHFeZnSe

Qiangqiang Gu, Siyuan Wan, Zengyi Du +5

By measuring the spatial distribution of differential conductance near impurities on Fe sites, we have obtained the quasi-particle interference (QPI) patterns in the (LiFe$…

cond-mat.mtrl-sci2018

A switchable diode based on room-temperature two-dimensional ferroelectric α-In2Se3 thin layers

Siyuan Wan, Yue Li, Wei Li +3

Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectri…