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cond-mat.mes-hall2010★ 33 cited
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
S. Boubanga-Tombet, F. Teppe, J. Torres +14
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature c…
cond-mat.mes-hall2010
THz emission induced by optical beating in nanometer-length field-effect-transistors
P. Nouvel, J. Torres, H. Marinchio +7
Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to…