2 papers
cond-mat.mes-hall2022
Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
C. Avogadri, S. Gebert, S. S. Krishtopenko +17
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…
cond-mat.mes-hall2019
Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
S. S. Krishtopenko, A. M. Kadykov, S. Gebert +9
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitio…