160 citations · 385 across the 12 of their papers we have counts for
6 papers · 1 filter
In-situ monitoring of room temperature reactions of lanthanides with nitrogen and hydrogen at low pressures
Jay R. Chan, H. Joe Trodahl, Denis Lefebvre +2
The dissociative chemisorption of molecular nitrogen on clean lanthanide surfaces at ambient temperature and low pressure is explored. In-situ conductance measurements track the co…
Breaking molecular nitrogen under mild conditions with an atomically clean lanthanide surface
Felicia Ullstad, Gabriel Bioletti, Jay Chan +5
A route to break molecular nitrogen (N2) under mild conditions is demonstrated by N2 gas cracking on, and incorporation into, lanthanide films. Successful growth of lanthanide nitr…
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Stéphane Vézian, Benjamin Damilano, Franck Natali +2
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found th…
Highly resistive epitaxial Mg-doped GdN thin films
C. -M. Lee, H. Warring, S. Vézian +7
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier con…
Electric field and photo-excited control of the carrier concentration in GdN
Harry Warring, B. J. Ruck, H. J. Trodahl +1
We present both electric-field and photo-excited control of the carrier concentration in GdN. There is no evidence in the results of a carrier-mediated contribution to the Gd-Gd ex…
Epitaxial ferromagnetic semiconductor GdN thin films on Si substrate
F. Natali, N. O. V. Plank, B. J. Ruck +4
This paper has been withdrawn by the author