3 papers
physics.app-ph2019
Molybdenum Trioxide Gates for Suppression of Leakage Current in InAlN/GaN HEMTs at 300°C
Caitlin A. Chapin, Savannah R. Benbrook, Chloe Leblanc +1
Because high electron mobility transistors (HEMTs) often exhibit significant gate leakage during high-temperature operation, the choice of Schottky metal is critical. Increased gat…
physics.ins-det2019
Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors
Hannah S. Alpert, Caitlin A. Chapin, Karen M. Dowling +4
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing vol…
physics.ins-det2018
Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors
Hannah S. Alpert, Karen M. Dowling, Caitlin A. Chapin +5
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were…