20 citations · 20 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2019★ 20 cited
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
Matthias Arzig, Michael Salamon, Ta Ching Hsiao +2
Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductiv…
physics.ins-det2018
Correction of beam hardening in X-ray radiograms
Manuel Baur, Norman Uhlmann, Thorsten Pöschel +1
The intensity of a monochromatic X-ray beam decreases exponentially with the distance it has traveled inside a material; this behavior is commonly referred to as Beer-Lambert's law…