most citedInfluence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

20 citations · 20 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2019★ 20 cited

Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals

Matthias Arzig, Michael Salamon, Ta Ching Hsiao +2

Two 75mm 4H-SiC single crystals are grown by the physical vapor transport (PVT) technique, using different insulation materials. The insulation material of higher thermal conductiv…