222 citations · 392 across the 8 of their papers we have counts for
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cond-mat.mes-hall2024★ 45 cited
Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
Moyu Chen, Yongqin Xie, Bin Cheng +11
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant com…
cond-mat.mes-hall2024
Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
Hanbo Xiao, Han Gao, Min Li +12
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The p…