activity
20192025
most citedMitigating photorefractive effect in thin-filmlithium niobate microring resonators

94 citations · 326 across the 17 of their papers we have counts for

collaborators

17 papers

physics.app-ph2025

Towards terahertz nanomechanics

Jiacheng Xie, Weifeng Wu, Mohan Shen +2

Advancing electromechanical resonators towards terahertz frequencies opens vast bandwidths for phononic signal processing. In quantum phononics, mechanical resonators at these freq…

quant-ph2025

A kilometer photonic link connecting superconducting circuits in two dilution refrigerators

Yiyu Zhou, Yufeng Wu, Chunzhen Li +4

Superconducting quantum processors are a leading platform for implementing practical quantum computation algorithms. Although superconducting quantum processors with hundreds of qu…

physics.optics2024

High-efficiency, cryogenic-compatible grating couplers on an AlN-on-sapphire platform through bottom-side coupling

Yiyu Zhou, Mohan Shen, Chunzhen Li +2

Sapphire is a commonly used substrate for wide-bandgap III-nitride photonic materials. However, its relatively high refractive index results in low transmission efficiency in grati…

physics.optics2024

Symmetric Second-Harmonic Generation in Sub-wavelength Periodically Poled Thin Film Lithium Niobate

Fengyan Yang, Juanjuan Lu, Mohan Shen +2

Second harmonic generation (SHG) extensively employs periodically poled nonlinear crystals through forward quasi-phase-matching to achieve efficient frequency conversion. As poling…

physics.app-ph2024

Non-contact excitation of multi-GHz lithium niobate electromechanical resonators

Danqing Wang, Jiacheng Xie, Yu Guo +2

The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. A…

cond-mat.mtrl-sci2024★ 1 cited

Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN

Guangcanlan Yang, Haochen Wang, Sai Mu +7

Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in partic…