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Haijing Zhang

3 papers hereh-index 12469 citations22 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author2

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1
  • cond-mat.supr-con1
same name
  • Haijing Zhang — 2 papers, h 3
  • Haijing Zhang — 1 paper, h 1
  • Haijing Zhang — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20182021
most citedBand filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

56 citations · 56 across the 2 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

1 paper · 1 filter

cond-mat.mtrl-sci2019★ 56 cited

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

Haijing Zhang, Christophe Berthod, Helmuth Berger +2

Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physica…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.