1 citations · 1 across the 3 of their papers we have counts for
5 papers
Field-effect chirality devices with Dirac semimetal
Jiewei Chen, Ting Zhang, Jingli Wang +4
Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chir…
Field-effect at electrical contacts to two-dimensional materials
Yan Sun, Alvin Tang, Ching-Hua Wang +13
The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical con…
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…
Two ultra-stable novel allotropes of Tellurium few-layers
Cong Wang, Linlu Wu, Xieyu Zhou +7
At least four two- or quasi-one- dimensional allotropes and a mixture of them were theoretically predicted or experimentally observed for low-dimensional Te, namely the α, \b{eta},…
Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices
Cong Wang, Jingsi Qiao, Yuhao Pan +5
Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengt…