activity
20152023
most citedFew-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

286 citations · 346 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023★ 16 cited

Colossal magnetoresistance in Ti lightly-doped Cr2Se3 single crystals with layered structure

Shu-Juan Zhang, Jian-Min Yan, F. Tang +11

Stoichiometric Cr2Se3 single crystals are particular layer-structured antiferromagnets which possess noncolinear spin configuration, weak ferromagnetic moments, moderate magnetores…

cond-mat.mtrl-sci2023★ 6 cited

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Ming-Yuan Yan, Shuang-Shuang Li, Jian-Min Yan +11

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates…

physics.app-ph2021

Field-effect chirality devices with Dirac semimetal

Jiewei Chen, Ting Zhang, Jingli Wang +4

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. In analogy to valley degree of freedom in semiconductors, chir…

physics.app-ph2021

Field-effect at electrical contacts to two-dimensional materials

Yan Sun, Alvin Tang, Ching-Hua Wang +13

The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical con…

physics.app-ph2019★ 1 cited

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Fuyou Liao, Zhongxun Guo, Yin Wang +13

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…

cond-mat.mtrl-sci2018

Two ultra-stable novel allotropes of Tellurium few-layers

Cong Wang, Linlu Wu, Xieyu Zhou +7

At least four two- or quasi-one- dimensional allotropes and a mixture of them were theoretically predicted or experimentally observed for low-dimensional Te, namely the α, \b{eta},…

cond-mat.mtrl-sci2018★ 37 cited

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

Cong Wang, Jingsi Qiao, Yuhao Pan +5

Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengt…

cond-mat.mtrl-sci2017★ 286 cited

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

Jingsi Qiao, Yuhao Pan, Feng Yang +3

Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus (BP) offers and could be feasibly synthesized by simple soluti…

cond-mat.mes-hall2015

A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He, Yiming Pan, Haiyan Nan +13

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device app…