76 citations · 176 across the 4 of their papers we have counts for
4 papers
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems
R. Winkler, E. Tutuc, S. J. Papadakis +4
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal…
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
K. Lai, W. Pan, D. C. Tsui +3
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure wi…
The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
K. Lai, W. Pan, D. C. Tsui +3
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterost…