Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

K. Lai, P. D. Ye, W. Pan +4

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al${}_2$O${}_3$ as the gate dielectric are fabricated on the Si/Si${}_{1-x}$Ge${}_x$ hetero…