42 citations · 112 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2019★ 21 cited
Two modes of HVPE growth of GaN and related macrodefects
V. V. Voronenkov, N. I. Bochkareva, R. I. Gorbunov +9
GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mo…
cond-mat.mtrl-sci2019★ 32 cited
Nature of V-Shaped Defects in GaN
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov +6
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 cm to 100 cm$^{…