activity
20182022
most citedObservation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

230 citations · 260 across the 6 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2022

Cascadable in-memory computing based on symmetric writing and read out

Lizheng Wang, Junlin Xiong, Bin Cheng +17

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting a…

physics.app-ph2022

Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector

Zhiyi Zhang, Bin Cheng, Jeremy Lim +10

Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report…

cond-mat.mes-hall20211 cited

Temperature-sensitive spatial distribution of defects in PdSe2 flakes

Xiaowei Liu, Yaojia Wang, Qiqi Guo +20

Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and…

physics.app-ph201929 cited

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Song Hao, Shengnan Yan, Yang Wang +17

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it…

physics.app-ph2019

Local electric field induced spin photocurrent in ReS2

Yang Zhang, Yu Wang, Yu Liu +6

Circular polarized photocurrent is observed near the electrodes on a few-layer ReS2sample at room temperature. For both electrodes, the spatial distribution of the circular polariz…

cond-mat.mtrl-sci2019230 cited

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Anyuan Gao, Jiawei Lai, Yaojia Wang +13

Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, lo…