activity
20192022
most citedMetal Halide Perovskite Nanocrystals: Synthesis, Post-Synthesis Modifications and Their Optical Properties

1.8k citations · 2.8k across the 13 of their papers we have counts for

collaborators

14 papers

physics.app-ph20222 cited

Machine-Learning-Optimized Perovskite Nanoplatelet Synthesis

Carola Lampe, Ioannis Kouroudis, Milan Harth +3

With the demand for renewable energy and efficient devices rapidly increasing, a need arises to find and optimize novel (nano)materials. This can be an extremely tedious process, o…

cond-mat.mes-hall202228 cited

Energy Transfer in Stability-Optimized Perovskite Nanocrystals

Michèle G. Greiner, Andreas Singldinger, Nina A. Henke +4

Outstanding optoelectronic properties and a facile synthesis render halide perovskite nanocrystals (NCs) a promising material for nanostructure-based devices. However, the commerci…

cond-mat.mes-hall2022

Electron-Hole Binding Governs Carrier Transport in Halide Perovskite Nanocrystal Thin Films

Michael F. Lichtenegger, Jan Drewniok, Andreas Bornschlegl +4

Two-dimensional halide perovskite nanoplatelets (NPLs) have exceptional light-emitting properties, including wide spectral tunability, ultrafast radiative decays, high quantum yiel…

physics.app-ph2022

Doubly Stabilized Perovskite Nanocrystal Luminescence Downconverters

Qi Xue, Carola Lampe, Tassilo Naujoks +8

Halide perovskite nanocrystals (NCs) have emerged as a promising material for applications ranging from light-emitting diodes (LEDs) to solar cells and photodetectors. Still, sever…

cond-mat.mtrl-sci2021

Dark and Bright Excitons in Halide Perovskite Nanoplatelets

Moritz Gramlich, Michael W. Swift, Carola Lampe +5

Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NP…

cond-mat.mes-hall202038 cited

Thickness-Dependence of Exciton-Exciton Annihilation in Halide Perovskite Nanoplatelets

Moritz Gramlich, Bernhard J. Bohn, Yu Tong +3

Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituti…