Impact of Source to Drain Tunneling on the Ballistic Performance of Ge, GaSb, and GeSn Nanowire p-MOSFETs

Dibakar Yadav, Deleep R Nair

We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFET…