most citedExfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

6 citations · 6 across the 1 of their papers we have counts for

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cond-mat.mes-hall2020★ 6 cited

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

Felix Jekat, Benjamin Pestka, Diana Car +8

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an…