56 citations · 151 across the 6 of their papers we have counts for
4 papers · 1 filter
Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx
Shimul Kanti Nath, Sanjoy Kumar Nandi, Shuai Li +1
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particula…
Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices
Shimul Kanti Nath, Sanjoy Kumar Nandi, Assaad El-Helou +5
The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers…
Electric field and current induced electroforming modes in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresis…
Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
Sanjoy Kumar Nandi, Shimul Kanti Nath, Assaad El Helou +4
In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices is a…