Md. Redwanul Islam

activity

20202025

most citedDemonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al

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61 citations · 131 across the 7 of their papers we have counts for

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2 papers · 1 filter

cond-mat.mtrl-sci2025★ 2 cited

Wafer scale reactive sputtering of highly oriented and ferroelectric Al $_{0.6}$ Sc $_{0.4}$ N from 300 mm AlSc Targets

Tom-Niklas Kreutzer, Muhammad Zubair Ghori, Md Redwanul Islam +4

This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al $_{1 - x}$ Sc $_{x}$ N thin films with very high Sc content. Al $_{0.6}$ Sc $_{0.4}$ N lay…

cond-mat.mtrl-sci2025

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Niklas Wolff, Georg Schönweger, Redwanul Md. Islam +4

The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. Thi…

Wafer scale reactive sputtering of highly oriented and ferroelectric Al0.6​Sc0.4​N from 300 mm AlSc Targets

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy

Wafer scale reactive sputtering of highly oriented and ferroelectric Al $_{0.6}$ Sc $_{0.4}$ N from 300 mm AlSc Targets