most citedSnO/-Ga2O3 vertical heterojunction diodes

96 citations · 197 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2020★ 24 cited

Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

Somayeh Saadat Niavol, Melanie Budde, Alexandra Papadogianni +9

Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here w…

physics.app-ph2020★ 96 cited

SnO/-Ga2O3 vertical heterojunction diodes

Melanie Budde, Daniel Splith, Piero Mazzolini +6

Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…

cond-mat.mtrl-sci2020★ 19 cited

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Melanie Budde, Piero Mazzolini, Johannes Feldl +6

Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…

physics.app-ph2020★ 33 cited

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Melanie Budde, Carsten Tschammer, Philipp Franz +7

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth wi…

physics.app-ph2019★ 25 cited

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Melanie Budde, Thilo Remmele, Carsten Tschammer +8

The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 C and…