activity
20182022
most citedVisible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

1 citations · 1 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2022

Holistic Determination of Optoelectronic Properties using High-Throughput Spectroscopy of Surface-Guided CsPbBr Nanowires

Stephen A. Church, Hoyeon Choi, Nawal Al-Amairi +5

Optoelectronic micro- and nanostructures have a vast parameter space to explore for modification and optimisation of their functional performance. This paper reports on a data-led…

physics.app-ph2020

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…

physics.app-ph2020

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Dimitars Jevtics, John McPhillimy, Benoit Guilhabert +7

Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as bu…

cond-mat.mes-hall20191 cited

Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering

N. Unsuree, H. Selvi, M. Crabb +3

The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-mi…

physics.app-ph2018

Graphene-Silicon-On-Insulator (GSOI) Schottky Diode Photodetectors

H. Selvi, E. W. Hill, P. Parkinson +1

Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light de…