activity
20182025
most citedMachine learning enables completely automatic tuning of a quantum device faster than human experts

87 citations · 246 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2025

Virtual Gates Enabled by Digital Surrogate of Quantum Dot Devices

Alexander Lidiak, Jacob Swain, David L. Craig +12

Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically define…

cond-mat.mes-hall2022★ 11 cited

Identifying Pauli spin blockade using deep learning

Jonas Schuff, Dominic T. Lennon, Simon Geyer +9

Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We presen…

cond-mat.mes-hall2021★ 14 cited

Bridging the reality gap in quantum devices with physics-aware machine learning

D. L. Craig, H. Moon, F. Fedele +9

The discrepancies between reality and simulation impede the optimisation and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of mater…

cond-mat.mes-hall2021★ 11 cited

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

B. Severin, D. T. Lennon, L. C. Camenzind +20

The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a ke…

cond-mat.mes-hall2020★ 36 cited

Deep Reinforcement Learning for Efficient Measurement of Quantum Devices

V. Nguyen, S. B. Orbell, D. T. Lennon +9

Deep reinforcement learning is an emerging machine learning approach which can teach a computer to learn from their actions and rewards similar to the way humans learn from experie…

cond-mat.mes-hall2020★ 31 cited

Quantum device fine-tuning using unsupervised embedding learning

N. M. van Esbroeck, D. T. Lennon, H. Moon +8

Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of the…