46 citations · 74 across the 2 of their papers we have counts for
3 papers
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo +6
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during…
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra +7
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for un…
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano +6
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-S…