activity
20172023
most citedUltra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

235 citations · 562 across the 5 of their papers we have counts for

collaborators

5 papers

quant-ph2023

Parallelization of frequency domain quantum gates: manipulation and distribution of frequency-entangled photon pairs generated by a 21 GHz silicon micro-resonator

Antoine Henry, Dario Fioretto, Lorenzo M. Procopio +8

Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability, noise resilience, parallelization and compatibility with telecom multiplex…

physics.app-ph2021★ 29 cited

Ultrahigh-sensitivity optical power monitor for Si photonic circuits

Takaya Ochiai, Kei Sumita, Shuhei Ohno +5

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high sensitivity. However, state-of-t…

physics.optics2020★ 65 cited

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Anas Elbaz, Riazul Arefin, Emilie Sakat +20

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…

physics.app-ph2020★ 235 cited

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

A. Elbaz, D. Buca, N. Von den Driesch +15

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…

physics.ins-det2017★ 233 cited

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

Jae-Hoon Han, Frederic Boeuf, Shinichi Takagi +1

A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulato…