65 citations · 65 across the 1 of their papers we have counts for
3 papers
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…
A Stern-Gerlach experiment with light: separating photons by spin with the method of A. Fresnel
Oriol Arteaga, Enric Garcia-Caurel, Razvigor Ossikovski
In 1822 A. Fresnel described an experiment to separate a beam of light into its right- and left- circular polarization components using chiral interfaces. Fresnel's experiment comb…