activity
20182021
most citedThermoelectric Performance of 2D Tellurium with Accumulation Contacts

128 citations · 128 across the 2 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2021

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well

Chang Niu, Gang Qiu, Yixiu Wang +3

Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…

cond-mat.mes-hall2020

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15

Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…

cond-mat.mes-hall2019

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Chang Niu, Gang Qiu, Yixiu Wang +4

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of…

cond-mat.mes-hall2019

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Gang Qiu, Chang Niu, Yixiu Wang +4

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manife…

cond-mat.mtrl-sci2018128 cited

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts

Gang Qiu, Shouyuan Huang, Mauricio Segovia +5

Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoreti…

cond-mat.mes-hall2018

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors

Samuel Berweger, Gang Qiu, Yixiu Wang +7

Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as m…