929 citations · 1.8k across the 11 of their papers we have counts for
12 papers
Thickness-Dependent Polaron Crossover in Tellurene
Kunyan Zhang, Chuliang Fu, Shelly Kelly +12
Polarons, quasiparticles arising from electron-phonon coupling, are crucial in understanding material properties such as high-temperature superconductivity and colossal magnetoresi…
Photocatalytic oxidation in few-layer Tellurene for loss-invariant integrated photonic resonance trimming
Dun Mao, Yixiu Wang, Hwaseob Lee +9
Two-dimensional materials with unique physicochemical properties promote photocatalytic activities. As the 2D material composites research studies the statistical average of comple…
Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium
Chang Niu, Gang Qiu, Yixiu Wang +6
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electric…
Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well
Chang Niu, Gang Qiu, Yixiu Wang +3
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…
Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization
Chang Niu, Gang Qiu, Yixiu Wang +4
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of…
Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene
Gang Qiu, Chang Niu, Yixiu Wang +4
Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manife…
Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Gang Qiu, Shouyuan Huang, Mauricio Segovia +5
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoreti…
Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Samuel Berweger, Gang Qiu, Yixiu Wang +7
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as m…
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
Gang Qiu, Yixiu Wang, Yifan Nie +4
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hoste…
1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Yuchen Du, Gang Qiu, Yixiu Wang +4
Experimental demonstrations of 1D van der Waals material tellurium have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements hav…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…