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physics.app-ph2019★ 2 cited
TCAD modeling for SiGe HBT THz detectors
Xueqing Liu, John Suarez, Michael Shur
Terahertz (THz) response of transistor and integrated circuit yields important information about device parameters and has been used for distinguishing between working and defectiv…
physics.app-ph2019★ 1 cited
TCAD model for TeraFET detectors operating in a large dynamic range
Xueqing Liu, Michael S. Shur
We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detec…