91 citations · 102 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2021★ 91 cited
Thermal Annealing of High Dose P Implantation in 4H-SiC
Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni +7
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminesce…
physics.app-ph2020★ 11 cited
3C-SiC grown on Si by using a SiGe buffer layer
M. Zimbone, M. Zielinski, E. G. Barbagiovanni +2
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and…