26 citations · 37 across the 2 of their papers we have counts for
4 papers
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Massimo Zimbone, Nicolo Piluso, Grazia Litrico +6
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the…
Thermal Annealing of High Dose P Implantation in 4H-SiC
Cristiano Calabretta, Massimo Zimbone, Eric G. Barbagiovanni +7
In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminesce…
3C-SiC grown on Si by using a SiGe buffer layer
M. Zimbone, M. Zielinski, E. G. Barbagiovanni +2
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…