112 citations · 135 across the 4 of their papers we have counts for
4 papers
High-Conductance, Ohmic-like HfZrO Ferroelectric Memristor
Laura Bégon-Lours, Mattia Halter, Youri Popoff +3
The persistent and switchable polarization of ferroelectric materials based on HfO-based ferroelectric compounds, compatible with large-scale integration, are attractive synapt…
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO layer is fabricated at a low thermal budget (~375C), enabling BEOL processes…
A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory
Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS i…
A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights
Mattia Halter, Laura Bégon-Lours, Valeria Bragaglia +5
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck o…