258 citations · 463 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020★ 205 cited
Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches
Seungho Kim, Gyuho Myeong, Wongil Shin +7
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the deve…
cond-mat.mtrl-sci2013★ 258 cited
High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
Wei Wu, Debtanu De, Su-Chi Chang +4
We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobil…