From the 1 of 4 linked papers with an AI index.
6 citations · 6 across the 3 of their papers we have counts for
4 papers
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
JiÅà Kroll, Pavla FederiÄová, Jan Chochol +15
The paper studies how high‑energy protons, neutrons, and gamma rays change the leakage current, capacitance, and effective doping of 4H‑SiC PN diodes and Low‑Gain Avalanche Detecto…
Development of Segmented 4H-SiC LGADs
VojtÄch KráÄmar, Jan Chochol, Adam Klimsza +11
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle d…
Exploring the Design and Measurements of Next-Generation 4H-SiC LGADs
Peter Å vihra, Jan Chochol, VladimÃr Kafka +13
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics s…
First generation 4H-SiC LGAD production and its performance evaluation
Radek Novotný, Jan Chochol, VladimÃr Kafka +11
This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary o…