105 citations · 344 across the 8 of their papers we have counts for
8 papers
Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal
Bing Deng, Binbin Wang, Ning Li +8
Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the…
NbSiTe: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response
Mingxing Zhao, Wei Xia, Yang Wang +5
Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D…
Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms
Zhen Tian, Yu Gan, Taiming Zhang +4
Black phosphorus has attracted great research interest due to its numerous applications in electronic devices, optoelectronic devices, energy storages and so on. Compared with the…
Continuous Tensor Network States for Quantum Fields
Antoine Tilloy, J. Ignacio Cirac
We introduce a new class of states for bosonic quantum fields which extend tensor network states to the continuum and generalize continuous matrix product states (cMPS) to spatial…
Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe
C. W. Wang, Y. Y. Y. Xia, Z. Tian +17
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure…
Lateral heterostructures formed by thermally converting n-type SnSe2 to p-type SnSe
Zhen Tian, Mingxing Zhao, Xiongxiong Xue +5
Different two-dimensional materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensi…
2D SnS: a phosphorene analogue with strong in-plane electronic anisotropy
Zhen Tian, Chenglei Guo, Mingxing Zhao +2
We study the anisotropic electronic properties of 2D SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscope and polarized Raman s…
Field-effect transistors of high-mobility few-layer SnSe
Chenglei Guo, Zhen Tian, Yanjun Xiao +2
We report the transport properties of mechanically exfoliated few-layer SnSe flakes, whose mobility is found with four probe measurements to be ~ 85 cmVs…