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most citedMeasuring nuclear reaction cross sections to extract information on neutrinoless double beta decay

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cond-mat.mtrl-sci2021

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

Massimo Zimbone, Nicolo Piluso, Grazia Litrico +6

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the…