most citedInterlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

4 citations · 4 across the 1 of their papers we have counts for

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1 paper

physics.app-ph2020★ 4 cited

Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Quanshan Lv, Faguang Yan, Nobuya Mori +6

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carr…