Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors

Quanshan Lv, Faguang Yan, Nobuya Mori +6

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carr…