4 citations · 4 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020★ 4 cited
Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field effect transistors
Quanshan Lv, Faguang Yan, Nobuya Mori +6
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carr…
physics.app-ph2019
Enhanced photoresponse in MoTe2 photodetectors with asymmetric graphene contacts
Xia Wei, Faguang Yan, Quanshan Lv +4
Atomically thin two dimensional (2D) materials are promising candidates for miniaturized high-performance optoelectronic devices. Here, we report on multilayer MoTe2 photodetectors…