activity
20182025
most citedCharge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

20 citations · 21 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2025

Enhanced phonon-drag by nanoscale design of homoepitaxial \hbox{-GaO}

J. Boy, R. Mitdank, A. Popp +2

Phonon drag may be harnessed for thermoelectric generators and devices. Here, we demonstrate the geometric control of the phonon-drag contribution to the thermopower. In nanometer-…

cond-mat.mes-hall2022★ 1 cited

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Olivio Chiatti, Johannes Boy, Christian Heyn +2

The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to q…

cond-mat.mtrl-sci2020★ 20 cited

Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

Johannes Boy, Martin Handwerg, Rüdiger Mitdank +2

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The elec…

cond-mat.mtrl-sci2018

Temperature dependence of the Seebeck coefficient of epitaxial -GaO thin films

Johannes Boy, Martin Handwerg, Robin Ahrling +4

The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped -GaO thin films was measured relative to al…

cond-mat.mtrl-sci2018

Transport Properties and Finite Size Effects in -GaO Thin Films

Robin Ahrling, Johannes Boy, Martin Handwerg +5

Thin films of the wide band gap semiconductor -GaO have a high potential for applications in transparent electronics and high power devices. However, the role of interfa…