5 citations · 6 across the 3 of their papers we have counts for
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cs.ET2022
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations
E. Esmanhotto, T. Hirtzlin, N. Castellani +7
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device en…
cs.ET2020★ 1 cited
In-situ learning harnessing intrinsic resistive memory variability through Markov Chain Monte Carlo Sampling
Thomas Dalgaty, Niccolo Castellani, Damien Querlioz +1
Resistive memory technologies promise to be a key component in unlocking the next generation of intelligent in-memory computing systems that can act and learn locally at the edge.…