43 citations · 44 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2020★ 1 cited
Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
M. Huber, G. Pozzovivo, I. Daumiller +5
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three di…
physics.app-ph2020★ 43 cited
Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs
Martin Huber, Marco Silvestri, Lauri Knuuttila +5
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. S…